Time-resolved photoluminescence from ZnO nanostructures

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Temperature dependence of continuum and time resolved photoluminescence of germanium nanostructures

  Germanium nanostructures were generated in the post annealed germanium oxide thin films. Visible and near infrared photoluminescence bands were observed in the samples annealed at 350°C and 400°C, respectively. These different luminescence ranges are attributed to the presence of the defects in oxide matrix and quantum confinement effect in the germanium nanostructures, respectively. Decay ti...

متن کامل

Time-and Polarization-Resolved Photoluminescence Studies of Directional Coupling in Isolated Semiconductor Nanostructures

A combination of wavelength-, time-, and polarizationresolved photoluminescence imaging on isolated P3HT nanofibers of varying molecular weight (from 10 to 65 kDa) has revealed a transition in dominant exciton coupling from primarily interchain (H-aggregation) for low molecular weight nanofibers, to predominantly intrachain (Jaggregation) coupling for high molecular weight nanofibers. Based on ...

متن کامل

Time-resolved photoluminescence measurement on polythiophene derivative

We measured the time-resolved photoluminescence (PL) on a film of a polythiophene derivative to investigate the formation and relaxation processes of a self-trapped exciton (STE). On the highand low-energy sides of the PL spectrum, we observed an ultrafast decay component emitted during the STE formation. We also found that PL of the derivative originates from two STE states with opposite symme...

متن کامل

Extraction of the surface trap level from photoluminescence: a case study of ZnO nanostructures.

Negative thermal quenching of both the excitonic and green emissions is observed in ZnO nanosheets, from which the energy level of surface traps can be extracted based on a model of multi-level transitions. The present study demonstrates a non-destructive and easy method to determine the trap levels in semiconductor nanostructures.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2005

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.2137456